BSR315PL6327HTSA1

Description：MOSFET P-CH 60V 620MA SC59
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:1b72d010a051 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSR315PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 620MA SC59. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSR315PL6327HTSA1

Description：MOSFET P-CH 60V 620MA SC59
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：620mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：800mOhm @ 620mA, 10V
Vgs(th) (Max) @ Id：2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：176 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SC59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSR315PL6327HTSA1

BSR315PL6327HTSA1

Single FETs, MOSFETs Overview

The BSR315PL6327HTSA1 is a P-Channel SIPMOS small-signal transistor in the PG-SC59 package. It features a drain-source breakdown voltage of -60 V and a continuous drain current of -0.62 A at 25 °C. The device has a maximum power dissipation of 0.8 W, with an on-state resistance of 800 mΩ at VGS=-10 V and ID=-0.62 A. It operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient conditions
Logic level enhancement mode compatible with standard digital interfaces
Footprint and pinning compatible with SOT-23 / SuperSOT-23 packages

Single FETs, MOSFETs Applications

High-side switching applications
Load switch circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm packaging and material specifications. Ensure the component meets specific automotive or industrial qualification requirements if applicable to your design. Cross-reference datasheet revision numbers to validate parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-Channel MOSFET with avalanche capability. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance. Confirm that the gate threshold voltage aligns with the logic levels available in the driving circuitry for reliable switching.

Single FETs, MOSFETs Part Context

This part belongs to the BSR315P series of SIPMOS small-signal transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching applications where low on-resistance and high reliability are required. The PG-SC59 package provides a compact footprint suitable for space-constrained printed circuit board layouts.