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The BSR56,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP. It is housed in a SOT23 surface-mount package with three terminals. The device operates in depletion mode and features a minimum drain-source breakdown voltage of 40 V. The maximum continuous drain current is rated at 0.02 A, while the maximum drain-source on-resistance is specified as 25 Ω. The component has a power dissipation rating of 0.25 W and a maximum feedback capacitance of 5 pF. It supports operating temperatures up to 150 °C and complies with RoHS standards.
Verify the specific ordering code BSR56,215 against official NXP documentation to confirm package type and electrical tolerances. Ensure compliance with environmental directives such as RoHS before procurement. Cross-reference datasheet parameters like breakdown voltage and on-resistance with design requirements to prevent specification mismatches during sourcing.
Select this component based on its 40 V breakdown voltage and 25 Ω on-resistance limits. Consider the SOT23 package constraints for thermal management given the 0.25 W power rating. Verify that the depletion mode characteristic aligns with the circuit's biasing needs. Check the maximum operating temperature of 150 °C against the intended environment.
The BSR56 belongs to the BSR series of N-channel JFETs from NXP. These devices are designed for general-purpose analog applications requiring low noise and high input impedance. The 215 suffix typically denotes tape and reel packaging for automated assembly processes within the semiconductor supply chain.
Consult NXP official documentation for direct pin-compatible replacements. Generic JFET substitutes may require verification of gate-source cutoff voltage and transconductance curves to ensure functional equivalence in sensitive analog circuits.