BSR57,215

BSR57,215

  • Description:JFET N-CH 40V SOT23
  • Series:-

SKU:f8ed6805f7f7 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 40V SOT23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):20 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:5 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):40 Ohms
  • Power - Max:250 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

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BSR57,215

Overview

The BSR57,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP Semiconductors. It is housed in a SOT23 surface-mount package with three terminals. The device operates in depletion mode and features a maximum drain-source breakdown voltage of 40 V. It supports a maximum continuous drain current of 0.02 A and has a maximum drain-source on-resistance of 25 Ω. The component is rated for a power dissipation of 0.25 W and can function at temperatures up to 150 °C. It exhibits a maximum feedback capacitance of 5 pF and complies with RoHS standards.

Feature Summary

  • N-channel JFET technology designed for depletion mode operation
  • Compact SOT23 surface-mount packaging for space-constrained designs
  • High thermal stability supporting operation up to 150 °C
  • RoHS compliant construction for environmental safety

Applications

  • Analog signal switching circuits
  • Voltage-controlled resistor applications
  • Low-noise amplifier input stages
  • Constant current source implementations

Procurement Notes

Verify the specific ordering code BSR57,215 against official NXP documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with SOT23 footprint requirements during PCB layout. Check for lead-free compliance markings consistent with RoHS directives. Confirm availability through authorized NXP distribution channels to guarantee authenticity and traceability.

Selection Notes

Select this component when an N-channel JFET with low gate leakage and high input impedance is required in a small form factor. The 40 V breakdown voltage suits low-voltage analog signal paths. Consider the 25 Ω on-resistance for linear application constraints. Verify that the 0.02 A current limit meets the circuit's operational demands without exceeding thermal limits in the intended enclosure.

Part Context

The BSR57 belongs to NXP’s portfolio of discrete junction field-effect transistors. These components are engineered for analog signal processing tasks where high input impedance and low noise characteristics are critical. The BSR57 variant specifically targets applications requiring compact surface-mount solutions with reliable performance in consumer and industrial electronic devices.

Replacement Considerations

Consult NXP datasheets for direct pin-compatible alternatives within the BSR series. Verify electrical parameters such as breakdown voltage and on-resistance match the original design requirements before substituting. Cross-reference with other manufacturers' JFETs only if full parameter equivalence is confirmed.

BSR57,215BSR57,215

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