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The onsemi BSR58 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum DC collector current of 100 mA and a maximum collector-emitter voltage (Vceo) of 30 V. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92 through-hole package with a power dissipation rating of 500 mW.
Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the physical marking on the TO-92 package matches the official datasheet specifications. Check for any recent Product Change Notifications (PCN) regarding assembly or material declarations before finalizing procurement orders.
Select this component when a PNP topology is required for low-voltage, low-current operations. Ensure the circuit design accounts for the 30 V collector-emitter breakdown limit. Verify that the thermal management strategy supports the 500 mW dissipation capability within the intended operating environment.
The BSR58 belongs to the family of small-signal PNP transistors manufactured by onsemi. These devices are commonly utilized in consumer electronics and industrial control systems where reliable switching and amplification are necessary. The TO-92 form factor facilitates easy integration into printed circuit boards requiring through-hole mounting techniques.
Consult official cross-reference lists for verified substitutes. Generic replacements must match the PNP polarity, TO-92 package, and electrical ratings (30 V, 100 mA). Avoid speculative substitutions without verifying pinout compatibility and thermal characteristics.