BSR606NH6327XTSA1

Description：MOSFET N-CH 60V 2.3A SC59
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:1f02f7cd8345 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSR606NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.3A SC59. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSR606NH6327XTSA1

Description：MOSFET N-CH 60V 2.3A SC59
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：657 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SC59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSR606NH6327XTSA1

BSR606NH6327XTSA1

Single FETs, MOSFETs Overview

The BSR606NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS-3 series, rated for a maximum drain-source voltage of 60 V and continuous drain current of 2.3 A at 25 °C. It features a low on-state resistance of 90 mΩ at VGS=4.5 V and 60 mΩ at VGS=10 V. The device operates within a temperature range of -55 °C to +150 °C, dissipates up to 0.5 W, and includes avalanche rating capabilities with single-pulse energy of 20 mJ.

Single FETs, MOSFETs Feature Summary

Logic level operation optimized for 4.5 V gate drive applications
Avalanche rated for robustness against inductive load switching events
Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

Automotive power management circuits
Low-side switching for logic-level loads
General-purpose power control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 to confirm packaging details such as reel quantity and tape specifications. Ensure that the PG-SC59 package footprint matches the target PCB design constraints. Confirm compliance requirements including RoHS and halogen-free status prior to final procurement authorization.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with logic-level gate drive compatibility is required. The 90 mΩ RDS(on) at 4.5 V makes it suitable for efficient switching at moderate currents. Consider the 0.5 W power dissipation limit and thermal impedance characteristics for adequate heat sinking or PCB copper area allocation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS-3 small-signal transistor family, designed for high efficiency and reliability. The BSR606N variant specifically targets automotive and industrial environments requiring rugged performance. It utilizes silicon technology housed in a compact surface-mount PG-SC59 package.