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BSS119 E6433 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119 E6433
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119 E6433
Single FETs, MOSFETs Overview
The BSS119 E6433 is an N-channel SIPMOS small-signal transistor in a PG-SOT23 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 6 Ω at VGS=10V and 10 Ω at VGS=4.5V. It supports a pulsed drain current of 0.68 A and operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Enhancement mode logic level operation for direct interface with standard logic families
- High dv/dt rating capability suitable for fast switching applications
- Integrated reverse diode with defined forward characteristics
Single FETs, MOSFETs Applications
- Low-side switching in power management circuits
- Logic level translation interfaces
- Small signal amplification stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix E6433 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure the component meets the required thermal footprint constraints, as power dissipation is dependent on ambient temperature and PCB layout. Confirm availability through authorized channels given potential lifecycle changes.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low gate charge and high switching speed in a compact surface-mount form factor. Evaluate the thermal resistance requirements against the system's ambient temperature conditions to ensure the junction temperature remains within safe operating limits during continuous or pulsed operation.
Single FETs, MOSFETs Part Context
This part belongs to the BSS119 series of SIPMOS transistors manufactured by Infineon Technologies. It utilizes advanced planar trench technology optimized for low on-resistance and fast switching performance in small-signal applications.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters such as VDS, ID, and RDS(on) when considering generic replacements.
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