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BSS119 E7796 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119 E7796
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119 E7796
Single FETs, MOSFETs Overview
The BSS119 is a small-signal N-channel enhancement-mode MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a maximum drain-source voltage of 100 V and a continuous drain current of 0.17 A at 25°C. The device operates with a gate-source voltage range of ±20 V and offers a typical on-state resistance of 3.4 Ω at 10 V gate drive. Packaged in PG-SOT23, it supports an operating temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Logic-level operation for direct interface with standard logic circuits
- High dv/dt rating capability for fast switching applications
- Enhancement mode N-channel construction
Single FETs, MOSFETs Applications
- Small-signal switching applications
- Logic level translation circuits
- Low-power signal processing stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets the required thermal and electrical ratings for the intended application environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, low-current switching tasks requiring logic-level compatibility. Consider the thermal resistance characteristics and power dissipation limits when designing for elevated ambient temperatures or high duty cycles.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor portfolio. It is designed for general-purpose switching and amplification in compact surface-mount designs, offering a balance of performance and cost-effectiveness for consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the PG-SOT23-3 footprint, 100V VDS rating, and logic-level threshold requirements.
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