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BSS119E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119E6327
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119E6327
Single FETs, MOSFETs Overview
The BSS119 is an N-channel enhancement mode logic level MOSFET in a PG-SOT23 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 0.17 A at 25 °C. The device exhibits a maximum on-state resistance of 6 Ω at VGS=10V and 10 Ω at VGS=4.5V. Gate threshold voltage ranges from 1.3 V to 2.3 V. Total gate charge is typically 1.67 nC, with a reverse diode forward recovery time of 32.5 ns max. Power dissipation is 0.36 W at 25 °C ambient temperature.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct interface with standard digital logic circuits
- dv/dt rated construction for high-speed switching applications
- Enhancement mode N-channel technology for low power consumption
Single FETs, MOSFETs Applications
- Low-side switching in battery-powered devices
- Load switching in automotive electronics
- General purpose small-signal transistor applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component revision aligns with the design requirements. Ensure the manufacturer source is authorized to guarantee authenticity. Check for any specific handling instructions related to the surface-mount package type.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with 100 V rating is required. Consider the low gate charge for efficiency in switching applications. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target circuit environment.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor portfolio. It utilizes planar technology optimized for low on-resistance and fast switching speeds. The PG-SOT23 package provides a compact footprint suitable for space-constrained printed circuit board layouts.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substitution. Verify package dimensions match the existing footprint. Review thermal performance ratings to ensure adequate heat dissipation capabilities.
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