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BSS119NH6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119NH6433XTMA1
- Description：MOSFET N-CH 100V 190MA SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20.9 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119NH6433XTMA1
Single FETs, MOSFETs Overview
The BSS119NH6433XTMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, manufactured using silicon technology. It features a single channel configuration housed in a surface-mount SOT-23-3 package. The device supports a drain-source voltage of 100 V and a continuous drain current of 190 mA. Key electrical characteristics include a maximum on-resistance of 6 Ohms, a gate threshold voltage of 1.4 V, and a total gate charge of 600 pC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode MOSFET design
- Automotive qualification compliant with AEC-Q100 standards
- Surface-mount construction in a compact SOT-23-3 package
Single FETs, MOSFETs Applications
- Automotive electronic circuits requiring AEC-Q100 compliance
- Low-current switching applications
- General-purpose signal switching tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix XTMA1 to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required automotive reliability standards for your target application. Check official manufacturer channels for current production status and availability, as distribution listings may vary.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rated N-channel MOSFET is required in a small SOT-23-3 footprint. It is suitable for low-current switching duties where a 6 Ohm on-resistance is acceptable. Ensure the design accounts for the 500 mW power dissipation limit and the specified operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the BSS119 series of N-channel MOSFETs produced by Infineon Technologies. It utilizes standard silicon planar technology and is designed for surface-mount assembly. The component is distinct from similar models like the BSS123 or BSS138 due to its specific 100 V voltage rating and 6 Ohm resistance profile.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 100 V rating, N-channel type, and SOT-23-3 package. Verify pinout compatibility and thermal performance before substitution.
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