Single FETs, MOSFETs BSS123 product image

BSS123

$0.14
  • Description:MOSFET, N-CH, SINGLE, 0.19A, 100
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cf5dfc69a6e5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSS123 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Good-Ark Semiconductor. Its product description is MOSFET, N-CH, SINGLE, 0.19A, 100. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123

  • Description:MOSFET, N-CH, SINGLE, 0.19A, 100
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 150mA, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.74 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:31.6 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123

BSS123

Single FETs, MOSFETs Overview

The BSS123 is a 100V N-Channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switched mode power supplies. It features advanced process technology to achieve low on-resistance and low gate charge. Key electrical parameters include a drain-source voltage of 100V, continuous drain current of 190mA at 25°C, and typical on-resistance of 3.5Ω at 10V gate drive. The device operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced MOSFET process technology for high cell density
  • Optimized for high efficiency in switched mode power supply applications
  • Features fast switching capabilities and reverse body recovery

Single FETs, MOSFETs Applications

  • High efficiency switched mode power supplies
  • General purpose amplification and switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets required environmental standards such as RoHS compliance before integration into final assemblies. Cross-reference part markings with datasheet specifications to authenticate source integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-Channel MOSFET with 100V breakdown voltage is required for low-power switching applications. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-state performance.

Single FETs, MOSFETs Part Context

This discrete semiconductor component belongs to the MOSFET category produced by Good-Ark Semiconductor. It is engineered using silicon-based technology to provide reliable performance in surface-mount configurations. The device supports automated placement due to its small outline package design.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Good-Ark Semiconductor for verified equivalent parts. Do not assume functional compatibility with generic N-Channel MOSFETs without verifying pinout and electrical parameter alignment.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at 100V.

What package type does the BSS123 use?

The device is available in an SOT-23 surface-mount package.

BSS123BSS123
$0.14
Buy Now