Single FETs, MOSFETs BSS123 E6433 product image

BSS123 E6433

  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:a3ce27180394 Category: Brand:

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BSS123 E6433 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123 E6433

  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:1.8V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123 E6433

BSS123 E6433

Single FETs, MOSFETs Overview

The Infineon BSS123 E6433 is an N-channel enhancement-mode SIPMOS small-signal transistor housed in a SOT-23 package. It features a drain-source voltage of 100 V and a continuous drain current of 0.17 A at 28 °C. The device exhibits a maximum on-state resistance of 6 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. Gate threshold voltage ranges from 0.8 to 2.0 V, with a typical value of 1.5 V. Power dissipation is rated at 0.36 W at 25 °C, operating within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive capability for direct interfacing with standard logic circuits
  • High breakdown voltage suitable for low-voltage switching applications
  • Compact surface-mount packaging designed for automated assembly

Single FETs, MOSFETs Applications

  • Low-side switching in consumer electronics
  • Signal level shifting between different voltage domains
  • Driver stages for LED arrays or small loads

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67000-S245 E6433 against the manufacturer's official documentation to confirm availability and exact specifications. Ensure that the component meets all required environmental standards and quality certifications relevant to the intended application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with high voltage tolerance is required for low-current switching tasks. Consider the thermal resistance characteristics and power dissipation limits relative to the ambient operating conditions. Evaluate the gate threshold voltage range to ensure compatibility with the driving logic levels used in the circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123 series of SIPMOS small-signal transistors manufactured by Infineon Technologies. The series is characterized by its robust construction and suitability for general-purpose switching applications. The E6433 suffix denotes a specific tape and reel configuration for automated manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other BSS123 variants such as the BSS123Q (Ordering Code: Q62702-S512 E6327). Verify pinout compatibility and electrical parameters before substitution.

BSS123 E6433BSS123 E6433

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