BSS123NH6327XTSA1

$0.24

Description：MOSFET N-CH 100V 190MA SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ac022d6efe9c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS123NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123NH6327XTSA1

Description：MOSFET N-CH 100V 190MA SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：20.9 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123NH6327XTSA1

BSS123NH6327XTSA1

Single FETs, MOSFETs Overview

The BSS123NH6327XTSA1 is an N-channel enhancement mode OptiMOS™ small-signal transistor manufactured by Infineon Technologies. It operates with a maximum drain-source voltage of 100 V and a continuous drain current of 0.19 A at 25 °C. The device features a gate threshold voltage ranging from 0.8 V to 1.8 V, with typical on-state resistance values of 6 Ω at 10 V and 10 Ω at 4.5 V. It supports a power dissipation of 0.5 W and functions within a temperature range of -55 °C to +150 °C. The component is housed in a PG-SOT23-3 package.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient conditions
Qualified according to AEC-Q101 automotive standards
Logic level compatible with 4.5 V gate drive requirements
Lead-free construction that is RoHS compliant and halogen free

Single FETs, MOSFETs Applications

Industrial control systems
Consumer electronics applications
Small signal switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as tape and reel quantities. Ensure the component meets the required AEC-Q101 qualification status if intended for automotive deployment. Cross-reference the exact part number with authorized distributors to confirm availability and compliance with environmental directives like RoHS.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with high voltage tolerance is required for low-current switching tasks. The logic-level gate drive capability simplifies interface design with standard microcontrollers. Consider the thermal resistance characteristics and package size constraints during PCB layout planning to ensure reliable heat dissipation within the specified operating temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to the BSS123N series of OptiMOS™ small-signal transistors. It utilizes silicon technology and is designed for surface-mount installation. The product line emphasizes reliability and efficiency for general-purpose switching applications in both industrial and consumer markets.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic specifications without cross-referencing datasheet parameters.