ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSS123T-HF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Comchip Technology. Its product description is MOSFET N-CH 100V 0.19A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123T-HF
- Description：MOSFET N-CH 100V 0.19A SOT23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123T-HF
Single FETs, MOSFETs Overview
The BSS123T-HF is a single N-channel enhancement mode field-effect transistor manufactured by Comchip Technology. It utilizes silicon gate technology for high voltage performance and is housed in an SOT-23 surface-mount package. The device features low input capacitance, fast switching speeds, and low on-resistance. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 0.2 A, and a maximum power dissipation of 350 mW at 25°C ambient temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced silicon gate technology to ensure high voltage stability and robust operational performance.
- Designed with low input capacitance and fast switching characteristics suitable for efficient signal processing.
- Constructed with low on-resistance to minimize conduction losses during operation.
Single FETs, MOSFETs Applications
- Low frequency power management applications
- Power drive circuits
- Class A amplifiers
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the ordering part number matches the exact pinout and thermal specifications required for the target PCB layout design.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact N-channel MOSFET with 100 V blocking capability. Evaluate the 0.2 A continuous current rating against peak load requirements. Consider the SOT-23 package constraints for thermal management in high-density layouts compared to larger packages.
Single FETs, MOSFETs Part Context
This component belongs to Comchip Technology's discrete semiconductor portfolio, specifically within the small-signal MOSFET category. It serves as a standard switching element for general-purpose electronic circuits, offering a balance between voltage handling and physical footprint for consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists from Comchip Technology or authorized distributors for verified equivalent part numbers. Do not substitute based solely on generic pinout compatibility without verifying absolute maximum ratings and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
