BSS123W-7-F

$0.29

Description：MOSFET N-CH 100V 170MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:179dd796167b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BSS123W-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123W-7-F

Description：MOSFET N-CH 100V 170MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for BSS123W-7-F

BSS123W-7-F

Single FETs, MOSFETs Overview

The BSS123W-7-F is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at +25°C. The device achieves a low on-state resistance of 6.0Ω at VGS=10V and 10Ω at VGS=4.5V. It operates within a temperature range of -55°C to +150°C with a total power dissipation of 200mW. Packaged in SOT323, it offers fast switching speeds and low input capacitance.

Single FETs, MOSFETs Feature Summary

Low gate threshold voltage for efficient drive requirements
Fast switching speed suitable for high-frequency applications
Low input/output leakage currents
High drain-source voltage rating

Single FETs, MOSFETs Applications

Small servo motor controls
Power MOSFET gate drivers
Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard tape and reel packaging quantity of 3000 units. Confirm that the component meets RoHS 2 and RoHS 3 compliance standards as defined by the manufacturer's green product definitions. Ensure the selected part number matches the commercial qualification level rather than the automotive-compliant variant.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 100V rating is required for low-current switching tasks. The SOT323 package provides a small footprint ideal for space-constrained designs. Consider the 6.0Ω RDS(ON) at 10V gate drive for optimal efficiency in logic-level compatible circuits requiring minimal static power loss.

Single FETs, MOSFETs Part Context

This device belongs to the BSS123W series of N-channel enhancement mode MOSFETs manufactured using advanced trench technology. It is distinct from the automotive-grade BSS123WQ variant. The component utilizes a molded plastic case material classified as UL 94V-0 flammability rated, ensuring safety in various electronic assemblies.