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BSS126 E6906 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
The Infineon BSS126 is a SIPMOS N-channel depletion mode small-signal transistor housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 21 mA at 25 °C. The device supports a reverse diode dv/dt rating of 6 kV/µs and operates within a temperature range of -55 °C to 150 °C. Electrical characteristics include a gate threshold voltage banding system (J through N) for precise selection, with typical on-state resistance ranging from 280 Ω to 700 Ω depending on bias conditions.
Verify the specific ordering suffix to confirm the gate threshold voltage band required for your design. The datasheet indicates that reels contain transistors from a single band, identified by a letter code on the label. Ensure the selected band aligns with your circuit's threshold requirements, as individual bands cannot be ordered separately. Confirm package type and tape-and-reel specifications during procurement.
Select this component when a normally-on N-channel MOSFET with high voltage blocking capability is needed. Consider the specific gate threshold voltage band (J-N) to match control logic levels. Evaluate the thermal resistance and power dissipation limits relative to ambient temperature conditions. Verify compatibility with high dv/dt environments due to the robust reverse diode characteristics.
The BSS126 belongs to Infineon's SIPMOS series of small-signal transistors. This family focuses on providing reliable discrete semiconductor solutions for general-purpose switching and amplification tasks. The device utilizes standard surface-mount packaging to facilitate automated assembly in compact electronic designs.
No public confirmed substitute part numbers are available in the provided documentation.
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