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BSS126IXTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS126IXTSA1
- Description：MOSFET N-CH 600V 21MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：2.7V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：21 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-3-5
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS126IXTSA1
Single FETs, MOSFETs Overview
The BSS126IXTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a maximum drain-source voltage of 600 V and a continuous drain current of 21 mA at 25°C. The device has a maximum on-resistance of 700 Ω and operates within a temperature range of -55°C to +150°C. It is housed in a PG-SOT23 (SOT-23-3) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Depletion mode operation for normally-on functionality
- High dv/dt rating capability
- Lead-free plating with RoHS compliance
Single FETs, MOSFETs Applications
- Industrial applications requiring high-voltage small-signal switching
- Constant current source circuits
- High-frequency switching designs
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure that the component meets JEDEC qualification standards for industrial applications as stated in the datasheet. Confirm material content and halogen-free status according to IEC61249-2-21 requirements before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a normally-on N-channel switch with high breakdown voltage. The low gate charge supports efficient driving in high-speed circuits. Consider the thermal characteristics and safe operating area when designing for pulsed currents or elevated ambient temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the BSS126I series of SIPMOS small-signal transistors. It is designed for robust performance in industrial environments, offering a balance of high voltage handling and compact packaging suitable for space-constrained PCB layouts.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific depletion mode characteristics or dv/dt ratings required for this application.
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