BSS126L6327HTSA1

$0.14

Description：MOSFET N-CH 600V 21MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:285c2407433c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSS126L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS126L6327HTSA1

Description：MOSFET N-CH 600V 21MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id：2.7V @ 8µA
Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS126L6327HTSA1

BSS126L6327HTSA1

Single FETs, MOSFETs Overview

The BSS126L6327HTSA1 is a depletion-mode N-channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a PG-SOT-23 package with Pb-free lead plating and RoHS compliance. Key electrical parameters include a drain-source breakdown voltage of 600 V, continuous drain current of 21 mA at 25°C, and gate-source voltage limits of ±20 V. The device exhibits a typical on-state resistance of 320 Ω at VGS=0V and 280 Ω at VGS=10V. It supports an operating temperature range from -55°C to +150°C and includes dv/dt rating capabilities.

Single FETs, MOSFETs Feature Summary

Depletion mode operation for normally-on applications
High dv/dt rated capability for fast switching environments
Available with specific gate threshold voltage sorting bands

Single FETs, MOSFETs Applications

High-voltage signal switching circuits
Fast switching power supply topologies
Level shifting in high-voltage logic interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific gate threshold voltage band (J through N) required for your design, as the L6327 suffix indicates standard reel packaging sorted into these bands. Confirm that the depletion mode characteristic aligns with your circuit's default state requirements. Ensure thermal management accounts for the 500 mW power dissipation limit at 25°C ambient temperature.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET with high voltage blocking capability is needed. The 600 V breakdown voltage makes it suitable for high-side or bootstrap applications where standard low-voltage MOSFETs would fail. Consider the relatively high on-resistance compared to enhancement-mode devices, which impacts conduction losses in continuous current paths.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS® family of small-signal transistors. The BSS126 series is designed for general-purpose high-voltage switching. The L6327 ordering suffix denotes tape and reel packaging containing 3000 pieces per reel, with the threshold voltage sorted into specific bands printed on the reel label.