BSS126L6906HTSA1

Single FETs, MOSFETs Overview

The BSS126L6906HTSA1 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates in a PG-SOT-23 package with Pb-free lead plating and RoHS compliance. The device features a drain-source breakdown voltage of 600 V, a continuous drain current of 21 mA at 25 °C, and a maximum on-state resistance of 700 Ω at VGS=0 V. It supports a gate-source voltage of ±20 V and power dissipation of 0.5 W. The component includes dv/dt rating capabilities up to 6 kV/µs and offers sorted threshold voltage bands.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation suitable for constant current source applications
• High dv/dt rated capability for fast switching environments
• Threshold voltage sorting available via specific reel indicators

Single FETs, MOSFETs Applications

• Switching mode power supplies (SMPS)
• Constant current sources
• High-frequency switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix L6906 indicates sorted VGS(th) bands on the reel label. Confirm the specific band letter required matches the application needs, as individual bands cannot be ordered separately. Ensure the PG-SOT-23 package footprint aligns with the PCB design. Check for RoHS compliance status if restricted substances are a concern.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage depletion mode requirements where a normally-on state is necessary. Consider the 600 V breakdown voltage and low gate charge characteristics for efficient switching. Evaluate the thermal resistance and power dissipation limits against the operating ambient temperature conditions. Verify that the sorted threshold voltage band meets the circuit's turn-off voltage specifications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for compact designs and high efficiency. It complements other depletion mode MOSFETs offering various voltage ratings from 60 V to 600 V. The technology focuses on reducing design complexity through robust safe operating areas and low negative turn-off voltages.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel depletion MOSFETs with similar 600 V ratings and SOT-23 packaging. Verify matching electrical parameters such as RDS(on), VGS(th), and package dimensions before substitution.