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BSS126SK-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE GP SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS126SK-7
- Description：DIODE GP SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：30mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：2 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：30.9 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS126SK-7
Single FETs, MOSFETs Overview
The BSS126SK-7 is an N-channel depletion mode MOSFET manufactured by Diodes Incorporated. It features a 600V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device utilizes a SOT-23 package and provides excellent high-voltage handling with fast switching capabilities.
Single FETs, MOSFETs Feature Summary
- N-channel depletion mode configuration
- Advanced planar technology for high voltage performance
- ESD protected structure
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation, as packaging quantities vary between tape and reel formats. Confirm that the component meets all applicable environmental directives and quality standards required for your specific manufacturing process before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage isolation and fast switching in small-signal or level shift circuits. Ensure the design accommodates the depletion mode operation characteristics and verify thermal management requirements based on the specified power dissipation limits.
Single FETs, MOSFETs Part Context
This part belongs to the BSS126SK series of N-channel depletion mode MOSFETs from Diodes Incorporated. It is designed using advanced planar technology to deliver robust performance in high-voltage environments while maintaining compact physical dimensions suitable for space-constrained designs.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states this component is not recommended for new design. Consult Diodes Incorporated directly for potential substitute parts or updated product recommendations.
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