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BSS127SSN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 50MA SC59. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS127SSN-7
- Description：MOSFET N-CH 600V 50MA SC59
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：160Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.08 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：21.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：610mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS127SSN-7
Single FETs, MOSFETs Overview
The BSS127SSN-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced planar technology to deliver high voltage handling and fast switching capabilities within a compact SC59 (SOT-23) surface-mount package. The device features a drain-source breakdown voltage of 600V, a continuous drain current of 70mA at +25°C, and a maximum power dissipation of 1.25W on a high copper PCB. Its low input capacitance and leakage make it suitable for small-signal and level shifting applications.
Single FETs, MOSFETs Feature Summary
- Advanced planar technology providing excellent high voltage performance and fast switching speeds
- Low input and output leakage characteristics with low input capacitance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free "Green" device configuration
Single FETs, MOSFETs Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix SSN-7 corresponds to the SC59 case style and tape & reel packaging format as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET is required in a small SOT-23 footprint. Ensure the application operates within the 600V drain-source voltage limit and accounts for the thermal resistance constraints associated with the SC59 package. Verify gate drive voltages align with the specified threshold and on-resistance characteristics for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the BSS127 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed for general-purpose switching applications requiring high voltage isolation in a miniature surface-mount form factor. The BSS127SSN-7 variant specifically denotes the SC59 package configuration available in tape and reel quantities.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists the BSS127S-7 as a related part number utilizing the standard SOT-23 package instead of the SC59 case. Both share identical electrical characteristics but differ in physical dimensions and pin spacing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
