BSS138

Single FETs, MOSFETs Overview

The UMW BSS138 is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a compact SOT-23 surface mount package designed for low voltage and low current applications. The device provides rugged, reliable performance with minimized on-state resistance. Key electrical specifications include a drain-source breakdown voltage of 50V, a continuous drain current of 300mA at VGS=10V, and a maximum static drain-source on-resistance of 2.5Ω at VGS=10V and ID=300mA. The gate threshold voltage is typically 1.5V at ID=250μA.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible design suitable for direct interface with standard logic circuits
• High-density cell architecture engineered to minimize on-state resistance
• ESD protection rated at 1.5kV under Human Body Model (HBM) conditions
• Compact industry-standard SOT-23 surface mount package facilitating automated assembly

Single FETs, MOSFETs Applications

• Small servo motor control
• Power MOSFET gate drivers
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet revision when sourcing, as parameters like RDS(on) limits can vary between vendors offering the same part number. Confirm the package type matches the target PCB footprint, as SOT-23 dimensions are standardized but supplier tolerances may differ slightly. Ensure the application environment stays within the specified junction temperature range of -55°C to +150°C for reliable operation.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, low-current switching tasks where space constraints require a small surface-mount package. The logic-level compatibility allows driving directly from microcontroller GPIOs without additional level-shifting circuitry. Consider the thermal resistance of 417°C/W when designing for higher ambient temperatures or limited PCB copper area to ensure junction temperatures remain within safe operating limits.

Single FETs, MOSFETs Part Context

This device belongs to the family of N-channel small-signal MOSFETs widely used in portable electronics and consumer appliances. The BSS138 variant specifically targets applications requiring fast switching speeds and low drive currents. Its DMOS construction offers a balance between cost-effectiveness and performance, making it a common choice for battery-powered devices and general-purpose signal switching.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other manufacturers' BSS138 parts such as Nexperia or Diodes Incorporated. Verify that substitute components meet the same 50V VDS and 300mA ID requirements. Check if alternative packages like SOT-323 are acceptable for the mechanical design.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate-Source Voltage (VGS) is ±20V.

How does junction temperature affect on-resistance?

The Drain-Source On-Resistance increases as the junction temperature rises from -55°C to +150°C, as shown in the normalized resistance characteristics.