BSS138-7-F

$0.14

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1cf8190eb305 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BSS138-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 50V 200MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS138-7-F

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS138-7-F

BSS138-7-F

Single FETs, MOSFETs Overview

The BSS138-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 200 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 3.5 Ω at V_GS = 10 V, with a typical value of 1.4 Ω. Gate threshold voltage ranges from 0.5 V to 1.5 V at I_D = 250 µA. Power dissipation is rated at 300 mW, and the junction temperature range spans -55°C to +150°C. Input capacitance is guaranteed at a maximum of 50 pF.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input/output leakage
Totally lead-free and fully RoHS compliant
Qualified to JEDEC standards for high reliability

Single FETs, MOSFETs Applications

Systems/load switches
High-efficiency power-management applications

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required packing quantity. The standard suffix indicates a tape and reel carrier containing 3000 units. Confirm package type and terminal finish specifications against the datasheet to ensure compatibility with assembly processes and regulatory requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact N-channel switch with low gate drive requirements. Evaluate thermal performance based on the specified power dissipation and thermal resistance values. Ensure operating conditions remain within the absolute maximum ratings for voltage, current, and temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs. It utilizes a SOT23 package with matte tin-plated terminals annealed over an alloy 42 leadframe. The device is designed to minimize on-state resistance while maintaining superior switching performance characteristics.