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The Nexperia BSS138BKSH is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within a compact SOT363 (SC-88) plastic surface-mounted package. It provides two independent channels with a drain-source voltage rating of 60 V and a continuous drain current of 320 mA per transistor at 25 °C. The device features a typical on-state resistance of 1.6 Ω at VGS = 10 V and ID = 320 mA, ensuring efficient switching performance. It includes electrostatic discharge protection up to 1.5 kV via Human Body Model standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure compatibility with the required SOT363 footprint during PCB layout. Confirm that the component meets all relevant RoHS directives and automotive qualification standards required for the intended application environment before finalizing procurement.
Select this component when space-constrained designs require dual N-channel MOSFETs in a minimal footprint. The low threshold voltage supports operation with various logic families. Consider the thermal resistance values and power dissipation limits relative to the expected duty cycle and ambient temperature conditions to ensure reliable long-term operation within the specified junction temperature range.
This device belongs to the BSS138BKS family of dual N-channel Trench MOSFETs manufactured by Nexperia. It shares core electrical specifications with other variants in the series but differs in physical packaging and marking codes. The SOT363 package allows for high-density mounting on printed-circuit boards, making it suitable for modern portable and automotive electronics where board real estate is limited.
Direct substitutes include other Nexperia dual N-channel MOSFETs in the SOT363 package with matching 60 V ratings. Verify pinout compatibility and thermal characteristics when replacing with components from different manufacturers. Ensure any alternative part maintains equivalent ESD protection levels and logic-level compatibility for seamless integration.