BSS138BKW-BX

Description：MOSFET N-CHANNEL 60V 320MA SC70
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:343a3c79ab3a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 60V 320MA SC70
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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BSS138BKW-BX

Overview

The BSS138BKW-BX is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within an SOT323 (SC-70) surface-mounted package. It features a drain-source voltage rating of 60 V and a continuous drain current of 320 mA at 25 °C. The device exhibits a typical on-state resistance of 11.6 Ω at VGS = 10 V and ID = 320 mA, with a gate-source threshold voltage ranging from 0.48 V to 1.6 V. Total gate charge is typically 0.6 nC at VGS = 4.5 V. Thermal resistance from junction to ambient in free air is specified between 350 K/W and 480 K/W.

Feature Summary

Logic-level compatible for direct interface with standard logic outputs
Very fast switching performance enabled by Trench MOSFET technology
Electrostatic discharge protection rated up to 1.5 kV according to Human Body Model standards
Qualified under AEC-Q101 automotive stress test requirements

Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General switching circuits

Procurement Notes

Verify the specific suffix BX against official Nexperia documentation to confirm packaging configuration, as ordering suffixes define physical supply formats. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive environments. Confirm thermal management strategies align with the specified junction-to-ambient resistance values for the target PCB footprint.

Selection Notes

Select this component for designs requiring compact SOT323 packaging with robust ESD protection. The low threshold voltage supports operation with various logic families. Evaluate thermal dissipation capabilities against the maximum power dissipation limits when operating near the upper temperature range. Verify that the required drain current does not exceed the 320 mA continuous limit under expected ambient conditions.

Part Context

This device belongs to the BSS138 series of small signal N-channel MOSFETs manufactured by Nexperia. It utilizes advanced Trench technology to achieve fast switching speeds within a minimal plastic surface-mounted footprint. The product line is designed for general-purpose switching applications where space constraints and electrostatic sensitivity are primary design considerations.