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The BSS138DW-7-F is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It is housed in a surface-mount SOT-363-6 package. The device features a drain-source breakdown voltage of 50 V and a continuous drain current of 200 mA. The on-state resistance is specified at 3.5 Ohms, with a gate-source threshold voltage of 500 mV. Maximum power dissipation is 200 mW, and the operating temperature range spans from -55 C to +150 C. Typical switching delays are 20 ns for both turn-on and turn-off.
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact packaging or qualification status. Ensure the component meets required AEC-Q101 standards if automotive reliability is necessary. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when a dual N-channel MOSFET solution is required in an SOT-363 footprint. Compare the 3.5 Ohm on-resistance and 50 V rating against circuit requirements. Consider the BSS138DWQ variant if automotive qualification is explicitly needed, as standard versions may differ in reliability certification.
This component belongs to the BSS138 series of MOSFETs from Diodes Incorporated. The series includes single-channel variants like the BSS138TA and other dual-channel packages. The DW suffix typically denotes the SOT-363-6 package configuration used in this specific part number.
The BSS138DWQ-7 is a qualified alternative within the same family offering similar electrical characteristics. Other dual N-channel MOSFETs in the SOT-363 package should be evaluated for pin compatibility and parameter matching.