ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.31A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Rds On (Max) @ Id, Vgs：2.6Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
- Power - Max：330mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The BSS138DWK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 50 V and a gate-source voltage (V_GSS) rating of ±20 V. The device provides a continuous drain current (I_D) of 310 mA at +25°C, with a pulsed drain current (I_DM) capability of 0.9 A. Static drain-source on-resistance (R_DS(ON)) is specified as 2.6 Ω max at V_GS = 10 V and 3.2 Ω max at V_GS = 4.5 V. Total power dissipation reaches 0.33 W in steady state. The component operates within a junction temperature range of -55°C to +150°C and utilizes an SOT363 surface-mount package.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low on-state resistance combined with fast switching speed and low input capacitance
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green device construction
Applications
- Load switch circuits
- High efficiency power management systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the required packing quantity matches the reel specifications provided in the datasheet. Ensure compliance with applicable environmental directives such as RoHS and REACH requirements relevant to your region. Validate that the component meets all necessary automotive or industrial qualification standards if utilized in regulated environments.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage load switching. Evaluate the R_DS(ON) values at your specific operating gate voltages to ensure adequate conduction performance. Consider the thermal resistance characteristics and PCB copper area requirements to maintain safe junction temperatures during operation.
Part Context
This part belongs to the BSS138 series of MOSFETs from Diodes Incorporated. It shares functional similarities with other members like the BSS138DW but differs in packaging and specific electrical parameters. The BSS138DWK variant specifically utilizes the SOT363 package to provide a dual-channel solution in a small footprint suitable for space-constrained designs.
Replacement Considerations
Direct substitutes include the BSS138DWQ-7 and BSS138DWQ-13 from Diodes Incorporated. Verify pinout compatibility and electrical parameter alignment before substitution.
