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Product Detailed Parameters
- Description：MOSFET N-CH 50V 0.36A DFN1006-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：51 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN1006-3
- Package / Case：SC-101, SOT-883
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Overview
The BSS138ESL-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It utilizes silicon technology and is housed in a DFN1006-3 surface-mount package. The device features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 360 mA. Key electrical parameters include a gate-source voltage range of -20 V to +20 V, a threshold voltage of 1.2 V, and a maximum power dissipation of 200 mW. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel enhancement mode operation for reliable switching applications
- Silicon-based construction ensuring stable performance across wide temperature ranges
- Compact DFN1006-3 surface-mount package design for space-constrained PCB layouts
Applications
- General purpose low-side switching circuits
- Battery protection modules
- Signal level shifting interfaces
Procurement Notes
Verify the specific marking code MM5 on the component body to confirm authenticity against official Comchip Technology documentation. Ensure the DFN1006-3 footprint matches your PCB design requirements. Cross-reference the datasheet revision date with your manufacturing timeline to guarantee parameter consistency. Confirm RoHS compliance status through the manufacturer's latest product compliance reports before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with 50V capability and 360mA current handling is required in a DFN1006-3 package. Compare the 3.5 Ohm on-resistance against load requirements to ensure acceptable power loss. Verify that the 200 mW power dissipation limit aligns with the thermal management strategy of the target application environment.
Part Context
This part belongs to Comchip Technology's discrete semiconductor lineup, specifically categorized under single N-channel MOSFETs. It serves as a surface-mount alternative to larger through-hole packages, offering similar electrical characteristics in a significantly reduced physical footprint suitable for modern high-density electronic assemblies.
Replacement Considerations
The BSS138-HF (SOT-23-3) offers identical electrical specifications but requires a different footprint. Verify pinout compatibility and thermal pad connectivity before substituting.
