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Product Detailed Parameters
- Description：N-CHANNEL MOSFET SOT-23
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：220mA
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138HE3-TP is an N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 220 mA. Key electrical characteristics include a maximum on-resistance of 2.5 Ohms, a gate-source voltage range of -20 V to +20 V, and a threshold voltage typically around 1.45 V. Power dissipation is rated at 620 mW, with an operating temperature range spanning from -55°C to +150°C. The component meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- High-speed switching capability enabled by low gate charge and fast rise/fall times suitable for efficient power management.
- Low on-state resistance minimizes conduction losses during operation, enhancing overall circuit efficiency.
Applications
- Load switching applications requiring high-side or low-side control
- Power management circuits for portable electronic devices
- Level shifting interfaces between different logic voltage domains
Procurement Notes
Verify the specific suffix HE3-TP against official MCC documentation to confirm lead-free compliance and RoHS status. Confirm the SOT-23-3 package dimensions match your PCB footprint requirements. Ensure the AEC-Q101 qualification aligns with your target application's environmental stress specifications before finalizing procurement.
Selection Notes
Select this component when a small-form-factor N-channel MOSFET with automotive qualification is required. The 50V rating provides sufficient headroom for 12V systems, while the 220mA current limit suits low-power signal switching. Compare the 2.5 Ohm on-resistance against alternative packages if higher current handling is necessary for your specific load conditions.
Part Context
This part belongs to the BSS138 series of single N-channel MOSFETs produced by Micro Commercial Components. The HE3-TP designation indicates a tin-plated termination finish compliant with environmental directives. It serves as a discrete semiconductor solution within the broader transistor category, specifically targeting surface-mount assembly processes for compact electronic designs.
Replacement Considerations
Cross-reference with other BSS138 variants such as BSS138AHE3-TP or BSS138KV-TP for potential pin-compatible alternatives. Verify that any substitute maintains identical SOT-23-3 packaging and meets the same 50V/220mA electrical ratings to ensure functional equivalence without redesigning the host circuit board.
