SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSS138KT-13P is an N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Split Gate Trench technology for improved performance. The device features a drain-source breakdown voltage of 50 V and a continuous drain current of 220 mA. It operates within a temperature range of -55°C to +150°C with a power dissipation of 250 mW. The component is housed in a surface-mount SOT-23-3 package, suitable for compact circuit designs.
Verify the specific datasheet version for the BSS138KT-13P to confirm exact electrical parameters, as values may vary between MCC product grades. Ensure compatibility with the target PCB footprint for the SOT-23-3 package. Confirm that the Split Gate Trench technology aligns with the design requirements for thermal management and switching speed in the final application environment.
Select this component for applications requiring a small form factor N-channel MOSFET with robust automotive-grade reliability. The Split Gate Trench technology offers advantages in switching performance compared to standard planar devices. Consider the 250 mW power dissipation limit when designing thermal solutions for high-density layouts or elevated ambient temperature environments.
This part belongs to the BSS138 series from Micro Commercial Components, which includes variants like BSS138A and BSS138B. These components are widely used as general-purpose switches in consumer and industrial electronics. The KT suffix typically indicates tape and reel packaging for automated assembly processes.
Compatible substitutes include the onsemi BSS138 and other generic BSS138 equivalents. Verify pinout compatibility and ensure that the replacement's Rds(on) and Vgs(th) specifications meet the original circuit design constraints.