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Product Detailed Parameters
- Description：MOSFET N-CH 50V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.75V, 5V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138L is an N-channel enhancement mode MOSFET from onsemi, housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 50 V and a continuous drain current of 200 mA. The device exhibits a low threshold voltage ranging from 0.5 V to 1.5 V, making it suitable for low-voltage applications. Maximum power dissipation is rated at 225 mW or 350 mW depending on the specific datasheet revision. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Low threshold voltage design ideal for low-voltage logic level switching
- Super high dense cell architecture for minimized on-resistance
- Compact industry-standard SOT-23 surface mount footprint
Applications
- Power management in DC-DC converters
- Gate drivers for power MOSFETs
- Small servo motor control circuits
- Battery-powered portable products
Procurement Notes
Verify the specific suffix against the manufacturer's latest documentation to confirm exact electrical tolerances and packaging variations. Confirm AEC-Q101 automotive qualification status if required for the target application, as availability varies by production lot. Ensure the selected variant matches the required thermal dissipation limits for the intended operating environment.
Selection Notes
Select this component for applications requiring small-signal switching with low gate drive requirements. The low threshold voltage allows compatibility with various logic families. Verify that the 200 mA current rating meets the load requirements. Consider the SOT-23 package size constraints when designing the PCB layout for thermal management.
Part Context
This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs manufactured by onsemi. These devices are designed for general-purpose switching and amplification applications. The series is widely used in consumer electronics and industrial equipment due to its reliability and compact form factor.
Replacement Considerations
Cross-reference with other manufacturers' BSS138 equivalents such as those from Rohm Semiconductor or AiT Semiconductor. Verify pinout compatibility and ensure that the replacement part meets or exceeds the 50 V breakdown voltage and 200 mA current specifications.
