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Product Detailed Parameters
- Description：MOSFET N-CH 50V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi BSS138LT3 is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-to-source voltage of 50 V and a continuous drain current rating of 200 mA at 25°C. The device supports a total power dissipation of 225 mW and operates within a temperature range of -55°C to +150°C. Electrical characteristics include a gate-source threshold voltage between 0.85 V and 1.5 V, with a maximum static drain-to-source on-resistance of 3.5 Ω at VGS = 5.0 V.
Feature Summary
- Low threshold voltage design suitable for low-voltage applications
- Miniature SOT-23 surface mount package for board space savings
- High electrostatic discharge protection capabilities
Applications
- DC-DC converters
- Power management in portable products
- Battery-powered computers and printers
- PCMCIA cards
- Cellular and cordless telephones
Procurement Notes
Verify the specific ordering suffix LT3 against official documentation to confirm packaging specifications. Confirm that the component meets required environmental standards such as RoHS compliance and lead-free status. Ensure the selected variant aligns with automotive or industrial qualification requirements if applicable.
Selection Notes
Select this component for designs requiring compact N-channel switching with low gate drive thresholds. Evaluate thermal resistance and junction temperature limits for high-density layouts. Consider the maximum continuous drain current and breakdown voltage ratings relative to the specific circuit load requirements.
Part Context
This part belongs to the BSS138L series of small-signal MOSFETs manufactured by onsemi. It utilizes standard silicon technology optimized for general-purpose switching in consumer electronics and portable devices. The device is designed to provide reliable performance in low-power environments.
Replacement Considerations
BSS138LT1G
FAQ
What is the maximum gate-to-source voltage rating?
The maximum continuous gate-to-source voltage is ±20 Vdc.
Is the BSS138LT3 qualified for automotive applications?
Yes, the BVSS prefix indicates AEC-Q101 qualification and PPAP capability for automotive and other applications requiring unique site and control change requirements.
