BSS138N-CT

BSS138N-CT

$0.33
  • Description:MOSFET N-CH 60V 0.6A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Strip

SKU:6b917793b3e2 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 0.6A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Strip
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS138N-CT

Overview

The BSS138N-CT is an N-channel MOSFET featuring a 60V drain-source voltage rating and a maximum continuous drain current of 0.5A at 25°C, decreasing to 0.4A at 70°C. It utilizes low rDS(on) trench technology with a typical on-resistance of 3.5Ω at VGS=10V. The device operates within a junction temperature range of -55°C to 150°C and includes a built-in body diode.

Feature Summary

  • Low on-state resistance achieved through trench technology
  • Fast switching speed capabilities
  • Low thermal impedance for efficient heat dissipation

Applications

  • Power routing circuits
  • DC/DC conversion applications
  • Motor drive systems

Procurement Notes

Verify the specific manufacturer designation for Analog Power Inc., as this part number may be a distributor-specific variant. Confirm that the ordering suffix corresponds to the tape-and-reel packaging format required for automated assembly processes.

Selection Notes

Select this component for low-voltage switching tasks requiring fast response times. Ensure the gate drive voltage aligns with the specified thresholds to maintain optimal on-resistance performance under expected load conditions.

Part Context

This device belongs to the small-signal MOSFET category designed for surface-mount integration. It provides a compact solution for general-purpose switching applications where space constraints and thermal management are critical design factors.

Replacement Considerations

Cross-reference with standard industry equivalents such as BSS138 or BSS138K-13. Verify pinout compatibility and ensure replacement parts meet the same voltage and current ratings for direct substitution.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is rated at 2A.

Does the device include an internal diode?

Yes, it features a built-in body diode with a forward voltage of approximately 0.7V at 0.25A.

BSS138N-CTBSS138N-CT
$0.33
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