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The BSS138N-CT is an N-channel MOSFET featuring a 60V drain-source voltage rating and a maximum continuous drain current of 0.5A at 25°C, decreasing to 0.4A at 70°C. It utilizes low rDS(on) trench technology with a typical on-resistance of 3.5Ω at VGS=10V. The device operates within a junction temperature range of -55°C to 150°C and includes a built-in body diode.
Verify the specific manufacturer designation for Analog Power Inc., as this part number may be a distributor-specific variant. Confirm that the ordering suffix corresponds to the tape-and-reel packaging format required for automated assembly processes.
Select this component for low-voltage switching tasks requiring fast response times. Ensure the gate drive voltage aligns with the specified thresholds to maintain optimal on-resistance performance under expected load conditions.
This device belongs to the small-signal MOSFET category designed for surface-mount integration. It provides a compact solution for general-purpose switching applications where space constraints and thermal management are critical design factors.
Cross-reference with standard industry equivalents such as BSS138 or BSS138K-13. Verify pinout compatibility and ensure replacement parts meet the same voltage and current ratings for direct substitution.
The maximum pulsed drain current (IDM) is rated at 2A.
Yes, it features a built-in body diode with a forward voltage of approximately 0.7V at 0.25A.