BSS138N E6433

BSS138N E6433

  • Description:MOSFET N-CH 60V 230MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:46012dc55256 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 230MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 230mA, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS138N E6433

Overview

The BSS138N E6433 is an N-channel SIPMOS small-signal transistor in a PG-SOT-23 package. It operates with a drain-source breakdown voltage of 60 V and continuous drain current of 0.23 A at 25 °C. The device features a maximum on-state resistance of 3.5 Ω at VGS=10 V and ±20 V gate-source voltage rating. It supports pulsed drain currents up to 0.92 A and power dissipation of 0.36 W. The component is qualified according to AEC-Q101, complies with RoHS standards, and functions within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Enhancement mode logic level operation for direct interface with standard logic circuits
  • High dv/dt capability rated at 6 kV/µs for robust switching performance
  • AEC-Q101 qualification ensuring reliability for automotive applications
  • Halogen-free construction compliant with IEC61249-2-21 standards

Applications

  • Automotive electronic systems requiring qualified discrete components
  • Logic level translation between different voltage domains
  • General purpose switching applications in consumer electronics
  • Low-side switching configurations in compact designs

Procurement Notes

Verify the specific ordering suffix H6433 against official Infineon documentation to confirm tape and reel quantities and marking codes. Ensure compatibility with PG-SOT-23 footprint requirements during PCB layout. Confirm that AEC-Q101 qualification meets specific project automotive standards. Check for any recent lifecycle status updates or alternative package options if volume requirements differ from standard reels.

Selection Notes

Select this component when a small-signal N-channel MOSFET with automotive qualification is required. The low gate charge and fast switching times suit high-frequency applications. Consider the thermal resistance characteristics for heat dissipation in dense layouts. Verify that the 60 V breakdown voltage provides sufficient margin for the target circuit's operating conditions.

Part Context

This part belongs to the BSS138 series of SIPMOS small-signal transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching and amplification in space-constrained environments. The PG-SOT-23 package offers a compact solution for surface-mount assembly. The product line emphasizes reliability and compliance with strict environmental regulations.

Replacement Considerations

Cross-reference with other BSS138 variants such as BSS138W for SOT-323 packaging differences. Verify pinout compatibility before substituting with similar N-channel MOSFETs from other manufacturers. Ensure electrical parameters like RDS(on) and VGS(th) remain within acceptable limits for the existing design.

BSS138N E6433BSS138N E6433

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