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The BSS138N E6433 is an N-channel SIPMOS small-signal transistor in a PG-SOT-23 package. It operates with a drain-source breakdown voltage of 60 V and continuous drain current of 0.23 A at 25 °C. The device features a maximum on-state resistance of 3.5 Ω at VGS=10 V and ±20 V gate-source voltage rating. It supports pulsed drain currents up to 0.92 A and power dissipation of 0.36 W. The component is qualified according to AEC-Q101, complies with RoHS standards, and functions within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix H6433 against official Infineon documentation to confirm tape and reel quantities and marking codes. Ensure compatibility with PG-SOT-23 footprint requirements during PCB layout. Confirm that AEC-Q101 qualification meets specific project automotive standards. Check for any recent lifecycle status updates or alternative package options if volume requirements differ from standard reels.
Select this component when a small-signal N-channel MOSFET with automotive qualification is required. The low gate charge and fast switching times suit high-frequency applications. Consider the thermal resistance characteristics for heat dissipation in dense layouts. Verify that the 60 V breakdown voltage provides sufficient margin for the target circuit's operating conditions.
This part belongs to the BSS138 series of SIPMOS small-signal transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching and amplification in space-constrained environments. The PG-SOT-23 package offers a compact solution for surface-mount assembly. The product line emphasizes reliability and compliance with strict environmental regulations.
Cross-reference with other BSS138 variants such as BSS138W for SOT-323 packaging differences. Verify pinout compatibility before substituting with similar N-channel MOSFETs from other manufacturers. Ensure electrical parameters like RDS(on) and VGS(th) remain within acceptable limits for the existing design.