BSS138N E6908

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:1161f241cd5a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS138N E6908

Overview

The BSS138N is an N-channel, enhancement-mode logic-level SIPMOS small-signal transistor in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The maximum on-state resistance is 3.5 Ω at VGS=10 V. It includes dv/dt rating capability up to 6 kV/µs and meets AEC-Q101 qualification standards.

Feature Summary

Logic-level operation for direct interface with standard digital logic circuits
High dv/dt rating suitable for fast switching applications
Qualified according to automotive reliability standard AEC-Q101

Applications

Level shifting between different voltage domains
Low-side switching in logic-controlled circuits
General-purpose small-signal amplification

Procurement Notes

Verify the specific ordering suffix (H6327 or H6433) against your required reel quantity. Confirm RoHS compliance and halogen-free status via the manufacturer's latest documentation. Ensure the component matches the PG-SOT-23 footprint requirements for your PCB design.

Selection Notes

Select this component when a low-voltage, small-signal N-channel MOSFET is required for logic-level control. Consider the 60 V breakdown voltage and 0.23 A current limit for appropriate load matching. Verify thermal constraints given the high thermal resistance in minimal footprints.

Part Context

This device belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon gate technology for robust performance. The PG-SOT-23 package provides a compact solution for space-constrained designs requiring reliable switching characteristics.

Replacement Considerations

Check for pin-compatible alternatives with similar VDS and ID ratings. Verify that any substitute meets the same AEC-Q101 qualification if automotive use is intended. Compare RDS(on) and capacitance values to ensure circuit timing compatibility.