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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138NH6327XTSA2 is an N-channel enhancement mode logic level small-signal MOSFET from Infineon Technologies, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 3.5 Ω at VGS=10 V and operates within a temperature range of -55 °C to +150 °C. It is qualified according to AEC-Q101 standards.
Feature Summary
- Enhancement mode operation with logic level gate drive compatibility
- dv/dt rated capability for high-speed switching applications
- Qualified according to AEC-Q101 automotive standards
- Lead-plating compliant with RoHS directives
Applications
- Automotive electronic systems requiring AEC-Q101 qualification
- Logic level signal switching circuits
- Small-signal amplification stages
- High dv/dt switching environments
Procurement Notes
Verify the specific ordering suffix H6327XTSA2 against official Infineon documentation to confirm tape and reel packaging quantities and marking codes. Ensure component authenticity through authorized distribution channels. Confirm that the AEC-Q101 qualification status aligns with project requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with 60 V rating and low gate charge is required. The PG-SOT-23 package suits space-constrained designs. Consider the 3.5 Ω RDS(on) limit for power dissipation calculations. Verify thermal management needs based on the 0.36 W power dissipation rating at 25 °C ambient temperature.
Part Context
This part belongs to the BSS138N SIPMOS® small-signal transistor series by Infineon Technologies. It utilizes silicon technology optimized for small-signal applications. The product line includes various packaging options and marking configurations to support diverse manufacturing and assembly requirements across consumer and industrial electronics sectors.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume functional equivalence with other N-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics against the original datasheet specifications.
