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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138NL6327HTSA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a PG-SOT-23 package with H6327 marking and is supplied in tape and reel quantities of 3000 units. The device supports a drain-source voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 3.5 Ω at VGS=10 V and a gate threshold voltage ranging from 0.6 V to 1.4 V. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Enhancement mode logic level operation for direct interface with digital control signals
- dv/dt rated capability for high-speed switching applications
- Qualified according to AEC-Q101 standards for automotive reliability
- Halogen-free construction compliant with IEC61249-2-21 requirements
Applications
- Logic level translation between different voltage domains
- Low-side switching in automotive electronic modules
- General purpose small-signal amplification
- Load switching in battery-powered portable devices
Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm packaging format and marking code. Ensure compliance with RoHS directives and halogen-free status as specified in the datasheet. Confirm that the PG-SOT-23 footprint matches the target PCB design constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage N-channel switch with logic-level compatibility is required. The 60 V breakdown voltage provides sufficient margin for standard 5 V and 12 V systems. Consider the thermal resistance characteristics if operating near the upper temperature limits or under pulsed load conditions exceeding continuous ratings.
Part Context
This part belongs to the BSS138N series of small-signal transistors manufactured by Infineon Technologies. It represents a standard solution for low-power switching tasks where minimal gate drive current and fast switching speeds are necessary. The SIPMOS technology ensures robust performance across the specified industrial and automotive temperature ranges.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications carefully when considering components from other manufacturers to ensure functional equivalence in the intended circuit application.
