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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS138NL6433HTMA1 is an N-channel SIPMOS small-signal transistor in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at VGS=10 V and operates within a temperature range of -55 to +150 °C. It is qualified according to AEC-Q101, Pb-free lead-plating compliant, and halogen-free.
Feature Summary
- Logic level enhancement mode operation
- dv/dt rated capability
- AEC-Q101 qualification
Applications
- Low-side switching
- Level shifting
- Load switching
Procurement Notes
Verify the specific ordering suffix H6433 against official Infineon documentation to confirm the 10000 SKs tape and reel packaging configuration. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring logic-level control with low gate charge characteristics. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or dense PCB layouts. Verify that the required drain current does not exceed the continuous or pulsed ratings under operating conditions.
Part Context
This part belongs to the BSS138N series of N-channel small-signal MOSFETs manufactured by Infineon Technologies. It utilizes SIPMOS technology and is designed for general-purpose switching applications where low input capacitance and fast switching speeds are beneficial.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions.
