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BSS138Q-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 50V 200MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS138Q-7-F
- Description：MOSFET N-CH 50V 200MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS138Q-7-F
Single FETs, MOSFETs Overview
The BSS138Q-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 200 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 3.5 Ω at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 300 mW in a SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power-management applications with minimized on-state resistance.
- Maintains superior switching performance alongside low input capacitance.
- Qualified to JEDEC standards for high reliability.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Single FETs, MOSFETs Applications
- Systems/load switches
- High-efficiency power-management applications
Single FETs, MOSFETs Procurement Notes
Verify the specific automotive qualification status of the BSS138Q-7-F variant against official manufacturer documentation. Confirm that the ordering suffix corresponds to the required packaging quantity and carrier type. Ensure compliance with applicable environmental directives such as RoHS 3 and REACH before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for circuits requiring a compact N-channel MOSFET with a 50 V breakdown voltage. The 3.5 Ω R_DS(ON) specification supports efficient switching for low-current loads up to 200 mA. Verify thermal management requirements based on the 300 mW power dissipation limit in the SOT-23 package.
Single FETs, MOSFETs Part Context
This part belongs to the BSS138 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The standard BSS138 datasheet serves as the primary technical reference for electrical characteristics and mechanical dimensions. Automotive-grade variants are available under separate datasheets.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical ratings carefully when considering alternative components.
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