BSS138WH6433XTMA1

BSS138WH6433XTMA1

$0.19
  • Description:MOSFET N-CH 60V 280MA SOT323-3
  • Series:SIPMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8f32e6ac1c44 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 280MA SOT323-3
  • Series:SIPMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 26µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT323
  • Package / Case:SC-70, SOT-323

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BSS138WH6433XTMA1

Overview

The BSS138WH6433XTMA1 is an N-channel small-signal MOSFET from Infineon Technologies, housed in a PG-SOT-323 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.28 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at VGS=10 V and a gate threshold voltage ranging from 0.6 V to 1.4 V. It supports a power dissipation of 0.5 W and operates within a temperature range of -55 °C to +150 °C. The component is logic level compatible, rated for dv/dt up to 6 kV/µs, and qualified according to AEC-Q101 standards.

Feature Summary

  • Enhancement mode N-channel construction with logic level gate drive compatibility
  • High dv/dt rating of 6 kV/µs for fast switching applications
  • AEC-Q101 qualification ensuring automotive reliability standards
  • Halogen-free and Pb-free lead-plating compliant with RoHS directives

Applications

  • Low-side switching in automotive electronic control units
  • General-purpose signal switching and level shifting
  • Driver circuits for small-signal loads requiring high dv/dt tolerance

Procurement Notes

Verify the specific ordering suffix H6433 to confirm the 10,000-unit tape and reel packaging configuration. Ensure that the procurement documentation explicitly references the AEC-Q101 qualification status required for automotive-grade deployment. Confirm compliance with halogen-free specifications per IEC61249-2-21 before finalizing supply chain agreements.

Selection Notes

Select this component when a compact SOT-323 footprint is required alongside robust automotive qualification. The low gate threshold voltage facilitates direct interfacing with standard logic outputs. Consider the thermal resistance of 250 K/W for heat dissipation calculations in constrained environments. Evaluate the 6 kV/µt dv/dt capability against transient voltage requirements in the target circuit design.

Part Context

This part belongs to the BSS138W series of SIPMOS® small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology optimized for low-power switching applications. The product line emphasizes miniaturization through the PG-SOT-323 package while maintaining high reliability metrics suitable for demanding industrial and automotive sectors.

Replacement Considerations

Cross-reference with other BSS138 variants such as BSS138N for alternative packaging options like SOT-23-3 if pinout or thermal performance adjustments are necessary. Verify that any substitute maintains the same 60 V breakdown voltage and N-channel polarity characteristics.

BSS138WH6433XTMA1BSS138WH6433XTMA1
$0.19
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