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The BSS138WH6433XTMA1 is an N-channel small-signal MOSFET from Infineon Technologies, housed in a PG-SOT-323 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.28 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at VGS=10 V and a gate threshold voltage ranging from 0.6 V to 1.4 V. It supports a power dissipation of 0.5 W and operates within a temperature range of -55 °C to +150 °C. The component is logic level compatible, rated for dv/dt up to 6 kV/µs, and qualified according to AEC-Q101 standards.
Verify the specific ordering suffix H6433 to confirm the 10,000-unit tape and reel packaging configuration. Ensure that the procurement documentation explicitly references the AEC-Q101 qualification status required for automotive-grade deployment. Confirm compliance with halogen-free specifications per IEC61249-2-21 before finalizing supply chain agreements.
Select this component when a compact SOT-323 footprint is required alongside robust automotive qualification. The low gate threshold voltage facilitates direct interfacing with standard logic outputs. Consider the thermal resistance of 250 K/W for heat dissipation calculations in constrained environments. Evaluate the 6 kV/µt dv/dt capability against transient voltage requirements in the target circuit design.
This part belongs to the BSS138W series of SIPMOS® small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology optimized for low-power switching applications. The product line emphasizes miniaturization through the PG-SOT-323 package while maintaining high reliability metrics suitable for demanding industrial and automotive sectors.
Cross-reference with other BSS138 variants such as BSS138N for alternative packaging options like SOT-23-3 if pinout or thermal performance adjustments are necessary. Verify that any substitute maintains the same 60 V breakdown voltage and N-channel polarity characteristics.