SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSS138WQ-13-F is a 50V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 0.28A at +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 3.5Ω at VGS = 10V and ID = 0.22A. It operates within a temperature range of -55°C to +150°C and is housed in an SOT323 package.
Verify the specific ordering suffix '-13-F' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP capability, before finalizing procurement specifications.
Select this component when designing circuits requiring a 50V N-channel MOSFET with low on-resistance and fast switching capabilities. Ensure the application environment supports the specified operating temperature range of -55°C to +150°C. Verify that the SOT323 package dimensions align with the PCB layout requirements.
This part belongs to the BSS138 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability requirements. The device utilizes silicon technology and is designed for surface-mount installation in compact electronic assemblies.
Consult official cross-reference lists or datasheets for equivalent parts from other manufacturers. Ensure any substitute component matches the 50V rating, SOT323 package, and AEC-Q101 qualification if automotive use is intended.
Yes, the BSS138WQ is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive applications.
The maximum gate-source voltage (VGSS) is ±20V.