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Product Detailed Parameters
- Description：MOSFET N-CH 250V 100MA SOT23-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：14Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：1V @ 56µA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-3-5
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS139IXTMA1 is an N-channel depletion mode small-signal transistor manufactured by Infineon Technologies. It is housed in a PG-SOT23-3 surface-mount package and designed for industrial applications. Key electrical parameters include a drain-source breakdown voltage of 250 V, a continuous drain current of 0.1 A at 25°C, and a maximum power dissipation of 0.36 W. The device exhibits a typical gate charge of 2.3 nC at 4.5 V and operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel depletion mode operation
- Qualified for industrial applications per JEDEC standards
- High drain-source breakdown voltage capability
- Halogen-free and RoHS compliant construction
Applications
- Industrial circuit switching
- Consumer electronics signal control
- General-purpose small-signal amplification
Procurement Notes
Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all relevant JEDEC qualification requirements for your intended industrial application environment before finalizing procurement decisions.
Selection Notes
Select this component when high-voltage handling and depletion mode functionality are required in a compact SMT footprint. Consider the thermal resistance characteristics and operating temperature limits during circuit design to ensure reliable performance under varying load conditions.
Part Context
This part belongs to Infineon's small-signal transistor portfolio, specifically engineered for robust industrial use. It utilizes SIPMOS technology to deliver efficient switching capabilities within a standard three-pin surface-mount package suitable for automated assembly processes.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitute part numbers. Do not assume functional equivalence with other N-channel MOSFETs without verifying depletion mode characteristics and voltage ratings.
FAQ
What is the default state of the BSS139IXTMA1?
As a depletion mode device, the BSS139IXTMA1 conducts current between the drain and source when the gate-to-source voltage is zero.
Is the BSS139IXTMA1 qualified for automotive use?
The datasheet specifies that the BSS139I is qualified for industrial applications according to JEDEC standards; automotive qualification is not explicitly stated for this specific part number.
