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The BSS139IXTSA1 is an N-channel depletion mode small-signal transistor manufactured by Infineon Technologies. It operates within a drain-source voltage range of up to 250 V and supports a continuous drain current of 0.1 A at 25 °C. The device features a maximum on-state resistance of 30 Ω at zero gate bias, with a typical value of 12.5 Ω. It utilizes the PG-SOT23-3 surface-mount package and is qualified for industrial applications according to JEDEC standards.
Verify the specific ordering suffix XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all relevant environmental compliance requirements, including RoHS and halogen-free standards, before finalizing procurement decisions for production integration.
Select this component when high-voltage handling and depletion mode functionality are required in a compact SMD form factor. Consider the thermal resistance characteristics and power dissipation limits relative to the intended operating temperature range. Evaluate the on-state resistance values to ensure compatibility with low-current switching requirements.
This part belongs to the BSS139I series of small-signal transistors designed for robust performance in demanding environments. The series emphasizes reliability through strict adherence to industrial testing protocols. It serves as a specialized solution for applications requiring precise control over N-channel depletion behavior.
Consult official Infineon cross-reference guides for verified substitutes. Do not assume functional equivalence based solely on package or voltage ratings without verifying electrical parameters.
The gate threshold voltage ranges from -2.1 V to -1 V under specified test conditions.
Dynamic characteristics such as turn-on delay and rise time are provided in the datasheet for evaluating high-frequency performance.