BSS139IXTSA1

BSS139IXTSA1

$0.35
  • Description:MOSFET N-CH 250V 100MA SOT23-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:895756fd961d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 250V 100MA SOT23-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):0V, 10V
  • Rds On (Max) @ Id, Vgs:14Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 56µA
  • Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS139IXTSA1

Overview

The BSS139IXTSA1 is an N-channel depletion mode small-signal transistor manufactured by Infineon Technologies. It operates within a drain-source voltage range of up to 250 V and supports a continuous drain current of 0.1 A at 25 °C. The device features a maximum on-state resistance of 30 Ω at zero gate bias, with a typical value of 12.5 Ω. It utilizes the PG-SOT23-3 surface-mount package and is qualified for industrial applications according to JEDEC standards.

Feature Summary

  • N-channel depletion mode operation
  • High drain-source breakdown voltage capability
  • Industrial application qualification per JEDEC standards
  • Halogen-free and lead-plating compliant

Applications

  • Industrial circuit switching
  • Small-signal power management
  • Consumer electronics control

Procurement Notes

Verify the specific ordering suffix XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets all relevant environmental compliance requirements, including RoHS and halogen-free standards, before finalizing procurement decisions for production integration.

Selection Notes

Select this component when high-voltage handling and depletion mode functionality are required in a compact SMD form factor. Consider the thermal resistance characteristics and power dissipation limits relative to the intended operating temperature range. Evaluate the on-state resistance values to ensure compatibility with low-current switching requirements.

Part Context

This part belongs to the BSS139I series of small-signal transistors designed for robust performance in demanding environments. The series emphasizes reliability through strict adherence to industrial testing protocols. It serves as a specialized solution for applications requiring precise control over N-channel depletion behavior.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Do not assume functional equivalence based solely on package or voltage ratings without verifying electrical parameters.

FAQ

What is the gate threshold voltage range?

The gate threshold voltage ranges from -2.1 V to -1 V under specified test conditions.

Is the device suitable for high-frequency switching?

Dynamic characteristics such as turn-on delay and rise time are provided in the datasheet for evaluating high-frequency performance.

BSS139IXTSA1BSS139IXTSA1
$0.35
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