BSS159N E6327

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:21290cf26e5a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id：2.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：44 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS159N E6327

Overview

The BSS159N E6327 is an N-channel depletion mode MOSFET from Infineon Technologies, housed in a PG-SOT-23 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at zero gate bias and a typical threshold voltage of -2.8 V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55 °C to +150 °C. The component includes dv/dt rating capabilities and offers sorted threshold voltage bands.

Feature Summary

Depletion mode operation providing normally-on functionality for constant current applications
High dv/dt rating capability suitable for demanding switching environments
Threshold voltage sorting available via specific reel indicators for precise circuit matching

Applications

Constant current source circuits
High-frequency switching designs
Compact electronic system integration

Procurement Notes

Verify the specific threshold voltage band letter printed on the reel label against design requirements, as the component is supplied in sorted bands rather than individually selectable values. Confirm that the PG-SOT-23 footprint matches the target PCB layout. Ensure compliance with Pb-free lead-plating specifications if required by the assembly process.

Selection Notes

Select this component when a normally-on N-channel configuration is required for low-voltage signal or power management tasks. Consider the thermal characteristics and safe operating area limits when designing for high ambient temperatures. Verify that the 60 V breakdown voltage aligns with the maximum expected drain-source voltage in the application environment.

Part Context

This part belongs to the SIPMOS small-signal transistor family, designed for efficient performance in compact form factors. It utilizes silicon technology optimized for robust operation across wide temperature ranges. The product line emphasizes reliability and ease of integration into modern surface-mount manufacturing processes.