BSS159N E6906

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:efa2d39ef608 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 230MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id：2.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：44 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS159N E6906

Overview

The BSS159N E6906 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a PG-SOT-23 package and operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a drain-source breakdown voltage (V(BR)DSS) of 60 V, a continuous drain current (ID) of 0.23 A at 25 °C, and a maximum on-state resistance (RDS(on)) of 8 Ω at VGS=0 V. The device supports a reverse diode dv/dt rating of 6 kV/µs and has a power dissipation capacity of 0.36 W.

Feature Summary

Depletion mode operation with integrated reverse diode
High dv/dt capability rated at 6 kV/µs
Threshold voltage sorted into specific bands for precise selection

Applications

Low-side switching applications
Current source circuits
Logic level translation
Load switch implementations

Procurement Notes

Verify the component status as discontinued or obsolete through official manufacturer channels before finalizing procurement plans. Confirm that the specific ordering suffix corresponds to the required threshold voltage band, as reels contain transistors from a single sorted band identified by a letter on the label. Ensure compliance with RoHS standards and Pb-free lead-plating requirements during sourcing.

Selection Notes

Select this component for applications requiring normally-on behavior where the channel conducts at zero gate-source voltage. Consider the thermal characteristics and safe operating area when designing for high ambient temperatures. Verify that the required threshold voltage falls within the available sorting bands (J, K, L, M, N) provided in the datasheet specifications.

Part Context

This part belongs to the BSS159 series of SIPMOS small-signal transistors. It utilizes standard silicon technology and is designed for general-purpose switching and amplification tasks. The device is housed in a compact SOT-23 package suitable for surface-mount assembly.