SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSS159NH6327XTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies, packaged in a SOT-23 (PG-SOT-23) surface-mount housing. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at VGS=0 V and a gate threshold voltage range of -3.5 V to -2.4 V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55 °C to +150 °C.
Verify the specific VGS(th) band letter printed on the reel label matches design requirements, as reels contain transistors sorted into single bands. Confirm package type PG-SOT-23 and tape-and-reel packaging specifications align with assembly equipment capabilities before finalizing procurement orders.
Select this component when a normally-on N-channel behavior is required rather than standard enhancement mode devices. Consider the high on-state resistance at zero gate bias and the negative threshold voltage range (-3.5 V to -2.4 V) during circuit design to ensure proper logic interfacing and biasing conditions are met.
This part belongs to the BSS159N SIPMOS small-signal transistor series manufactured by Infineon Technologies. It utilizes silicon technology and is designed for general-purpose small-signal switching and amplification tasks where depletion mode functionality provides specific circuit advantages over standard enhancement mode alternatives.
Direct replacement requires verifying depletion mode compatibility and matching the -3.5 V to -2.4 V threshold voltage band. Ensure the substitute component supports the same SOT-23 footprint and maintains equivalent dv/dt ratings if used in high-speed switching environments.
The letter code indicates the specific VGS(th) sorting band (J, K, L, M, or N) contained within that reel. Each reel contains transistors from only one band.
It is a depletion mode device, meaning it conducts current when the gate-to-source voltage is zero.