BSS159NH6327XTSA1

BSS159NH6327XTSA1

  • Description:MOSFET N-CH 60V 230MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:031f0d434bdd Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 230MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):0V, 10V
  • Rds On (Max) @ Id, Vgs:3.5Ohm @ 160mA, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 26µA
  • Gate Charge (Qg) (Max) @ Vgs:2.9 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:44 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS159NH6327XTSA1

Overview

The BSS159NH6327XTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies, packaged in a SOT-23 (PG-SOT-23) surface-mount housing. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at VGS=0 V and a gate threshold voltage range of -3.5 V to -2.4 V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Depletion mode operation with dv/dt rating capability
  • VGS(th) sorting bands available for precise threshold control
  • Lead-plating compliant with RoHS standards

Applications

  • High-speed switching circuits requiring depletion mode characteristics
  • Logic level translation interfaces
  • Current source applications

Procurement Notes

Verify the specific VGS(th) band letter printed on the reel label matches design requirements, as reels contain transistors sorted into single bands. Confirm package type PG-SOT-23 and tape-and-reel packaging specifications align with assembly equipment capabilities before finalizing procurement orders.

Selection Notes

Select this component when a normally-on N-channel behavior is required rather than standard enhancement mode devices. Consider the high on-state resistance at zero gate bias and the negative threshold voltage range (-3.5 V to -2.4 V) during circuit design to ensure proper logic interfacing and biasing conditions are met.

Part Context

This part belongs to the BSS159N SIPMOS small-signal transistor series manufactured by Infineon Technologies. It utilizes silicon technology and is designed for general-purpose small-signal switching and amplification tasks where depletion mode functionality provides specific circuit advantages over standard enhancement mode alternatives.

Replacement Considerations

Direct replacement requires verifying depletion mode compatibility and matching the -3.5 V to -2.4 V threshold voltage band. Ensure the substitute component supports the same SOT-23 footprint and maintains equivalent dv/dt ratings if used in high-speed switching environments.

FAQ

What does the letter code on the reel label indicate?

The letter code indicates the specific VGS(th) sorting band (J, K, L, M, or N) contained within that reel. Each reel contains transistors from only one band.

Is this an enhancement or depletion mode device?

It is a depletion mode device, meaning it conducts current when the gate-to-source voltage is zero.

BSS159NH6327XTSA1BSS159NH6327XTSA1

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