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Product Detailed Parameters
- Description：MOSFET N-CH 60V 230MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 160mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：44 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS159NL6327HTSA1 is an N-channel depletion mode small-signal MOSFET from Infineon Technologies, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.23 A at 25 °C. The device exhibits a maximum on-state resistance of 8 Ω at VGS=0 V and includes dv/dt rating capabilities up to 6 kV/µs. Operating temperatures range from -55 °C to +150 °C, with power dissipation rated at 0.36 W.
Feature Summary
- Depletion mode operation for normally-on applications
- High dv/dt rating capability for fast switching environments
- Threshold voltage sorting available via specific reel indicators
Applications
- High-speed switching circuits requiring normally-on behavior
- dv/dt tolerant protection stages
- Small-signal amplification in depletion configurations
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm packaging details and threshold voltage banding options. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the PG-SOT-23 footprint dimensions during PCB layout finalization to guarantee mechanical compatibility.
Selection Notes
Select this component when a normally-on N-channel configuration is required within a compact SOT-23 form factor. Consider the high dv/dt rating if the application involves rapid voltage transitions. Verify that the threshold voltage bands align with the specific control logic levels of the target circuit design.
Part Context
This part belongs to Infineon's SIPMOS® small-signal transistor series. It utilizes standard silicon technology optimized for low-power discrete switching tasks. The device is designed for surface-mount assembly, supporting automated manufacturing processes while maintaining robust electrical performance across wide temperature ranges.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific depletion mode characteristics or dv/dt ratings.
