BSS169IXTSA1

Overview

The BSS169IXTSA1 is a single N-channel depletion mode MOSFET manufactured by Infineon Technologies. It operates within a drain-source voltage range of up to 100 V and supports continuous drain currents of 0.19 A at 25°C. The device features a maximum on-state resistance of 12 Ω at zero gate bias, ensuring reliable conduction in normally-on configurations. Packaged in the PG-SOT23-3 surface-mount format, it provides robust thermal performance with a junction-to-ambient thermal resistance of 250 K/W. Qualified for industrial applications per JEDEC standards, this component integrates high dv/dt ratings and low gate charge characteristics suitable for compact switching designs.

Feature Summary

• Depletion mode operation enables normally-on functionality ideal for constant current sources
• High reverse diode dv/dt rating minimizes commutation losses during switching transitions
• Industrial qualification ensures reliability under rigorous JEDEC testing conditions
• Lead-free plating and halogen-free composition support environmentally compliant assembly

Applications

• Switching power supplies requiring normally-on topology
• Constant current source circuits for LED or sensor biasing
• Low-voltage logic level interface buffering
• Protection circuits utilizing inherent depletion characteristics

Procurement Notes

Verify the complete ordering part number against official Infineon documentation before procurement. Confirm that the specific suffix matches the required tape-and-reel quantity and packaging variant. Ensure the requested revision aligns with current manufacturing specifications. Cross-reference the manufacturer's datasheet for any updates regarding lead times or regional availability constraints prior to finalizing purchase orders.

Selection Notes

Select this component when a normally-on N-channel configuration is required for simplified drive circuitry. Evaluate the 12 Ω maximum on-resistance to ensure acceptable voltage drop in low-current paths. Consider the 100 V breakdown capability for moderate voltage isolation needs. Verify that the SOT-23-3 footprint accommodates the available PCB space while maintaining adequate thermal clearance for the specified power dissipation limits.

Part Context

This device belongs to Infineon's small-signal transistor portfolio designed for general-purpose switching and amplification. It utilizes silicon technology optimized for low-cost, high-volume production. The depletion mode characteristic distinguishes it from standard enhancement-mode MOSFETs, offering unique utility in analog and mixed-signal applications where default conduction states are beneficial for system stability.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement devices maintain identical depletion mode behavior and pinout compatibility. Verify that alternative components meet or exceed the 100 V breakdown voltage and 0.19 A current handling requirements. Confirm package dimensions match the PG-SOT23-3 outline to prevent mechanical integration issues.