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Product Detailed Parameters
- Description：MOSFET P-CH 250V 190MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS192PE6327 is a P-channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.19 A at 25°C. The device operates in enhancement mode with logic-level gate drive capability. Key electrical parameters include a maximum on-state resistance of 12 Ω at VGS=-10V and ID=-0.19A, and a total gate charge of up to 6.1 nC. It supports a reverse diode dv/dt rating of 6 kV/µs and dissipates up to 1 W of power. The component is housed in an SOT-89 package and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage P-channel design rated for -250 V drain-source breakdown
- Enhancement mode operation optimized for logic-level gate drive signals
- dv/dt rated internal body diode capable of handling high transient switching speeds
Applications
- High-side load switching applications requiring high blocking voltage
- Power management circuits utilizing logic-level control interfaces
- General-purpose amplification and switching stages in industrial electronics
Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm tape and reel specifications. Ensure the requested part matches the exact thermal and electrical ratings defined in the datasheet. Confirm compliance with relevant environmental standards prior to integration into final assemblies.
Selection Notes
Select this component when circuit designs require a single P-channel switch with high voltage tolerance exceeding standard low-voltage MOSFETs. The logic-level threshold simplifies interface with standard digital logic families. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.
Part Context
This component belongs to the Infineon BSS192P series of SIPMOS small-signal transistors. These devices are engineered for compact surface-mount implementations where high voltage isolation is necessary. The SOT-89 packaging provides a balance between thermal performance and board space efficiency for general-purpose electronic systems.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains the -250 V breakdown voltage and compatible pinout configuration.
