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Product Detailed Parameters
- Description：MOSFET P-CH 250V 190MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：12Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS192PH6327FTSA1 is a P-channel SIPMOS small-signal transistor in a PG-SOT89 package. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.19 A at 25°C. The device has a maximum gate-source voltage of ±20 V and power dissipation of 1 W. On-state resistance ranges from 7.7 Ω to 12 Ω depending on gate drive. It operates between -55°C and +150°C, meets AEC-Q101 standards, and is halogen-free.
Feature Summary
- P-Channel enhancement mode logic level transistor
- Rated for high dv/dt performance
- Qualified according to AEC-Q101 automotive standard
Applications
- Automotive electronic circuits requiring AEC-Q101 qualification
- High-side switching applications with elevated voltage requirements
- General-purpose small-signal amplification and switching
Procurement Notes
Verify the specific ordering suffix H6327 corresponds to the tape and reel quantity of 1000 pieces per reel as documented. Confirm that the component meets the halogen-free requirement according to IEC61249-2-21 standards. Ensure the requested part number matches the exact Infineon Technologies designation for this SIPMOS device.
Selection Notes
Select this component for designs requiring a single P-channel MOSFET with high voltage tolerance up to 250 V. Consider the thermal resistance characteristics and power dissipation limits when designing for ambient temperatures above 25°C. Verify that the gate drive voltage levels are sufficient to achieve the desired on-state resistance specifications.
Part Context
This component belongs to the Infineon BSS192P series of SIPMOS small-signal transistors. It utilizes silicon technology and is housed in a surface-mount PG-SOT89 package. The device is designed for robust performance in demanding environments, featuring specific ratings for pulsed currents and reverse diode characteristics suitable for inductive load switching.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence with other P-channel MOSFETs without verifying pinout compatibility, voltage ratings, and thermal performance against the original datasheet specifications.
