BSS205NH6327XTSA1

$0.27

Description：MOSFET N-CH 20V 2.5A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c279728dd80d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 2.5A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs：3.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：419 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS205NH6327XTSA1

Overview

The BSS205NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS 2 series. It features a 20 V drain-source voltage rating and supports a continuous drain current of 2.5 A at 25 °C, with a pulsed capability of 10 A. The device offers a maximum on-state resistance of 85 mΩ at 2.5 V gate drive and 50 mΩ at 4.5 V. It includes avalanche energy ratings (EAS = 10.8 mJ) and high reverse diode dv/dt tolerance (6 kV/µs). Packaged in SOT-23, it operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Super Logic Level architecture enabling efficient switching with low gate drive voltages.
Avalanche rated for robustness against transient overvoltage events.
High reverse diode dv/dt capability suitable for demanding switching applications.

Applications

Low-side switching in battery-powered portable devices
Load switching in automotive electronics
General-purpose small-signal transistor circuits

Procurement Notes

Verify component authenticity by matching the marking code SZS and ordering suffix H6327XTSA1 against official Infineon documentation. Confirm compliance with RoHS directives and halogen-free standards per IEC61249-2-21. Ensure procurement channels provide valid traceability records for AEC-Q101 qualified automotive-grade components.

Selection Notes

Select this component when a compact N-channel switch requires operation below standard logic levels. The 2.5 V rated Super Logic level feature allows direct interfacing with low-voltage microcontrollers. Verify that the required thermal management aligns with the specified junction-to-ambient thermal resistance values.

Part Context

This part belongs to the BSS205N family within Infineon's OptiMOS 2 portfolio. It utilizes silicon technology and is housed in a PG-SOT23 surface-mount package. The product line focuses on optimizing performance for small-signal applications while maintaining automotive reliability standards.

Replacement Considerations

Consult official Infineon cross-reference documentation for verified substitutes. Do not assume functional equivalence based solely on pinout or generic electrical parameters without validating specific dynamic characteristics and package dimensions.